Current transport mechanisms studied by I-V-T and IR photoemission measurements on a P-doped PtSi Schottky diode
- 31 August 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (8) , 1107-1116
- https://doi.org/10.1016/0038-1101(93)90189-w
Abstract
No abstract availableKeywords
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