New method to determine the base resistance of bipolar transistors

1 March 1992

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 13 (3) , 158-160
https://doi.org/10.1109/55.144996

Abstract

A new method to determine the base resistance of bipolar transistors under forward-bias conditions is presented. Using special transistor structures, the total base resistance has been directly measured and then separated into its components, the external and internal base resistances. The sheet resistance for the internal base region can be estimated for a base-emitter voltage range of practical interest. An accurate estimation of the base resistance of advanced bipolar transistors under high-forward-bias conditions is demonstrated.<>

Keywords

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