Mechanism of alkali-promoted oxidation of silicon
- 23 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (21) , 1714-1716
- https://doi.org/10.1063/1.98553
Abstract
Photoelectron spectroscopy data suggest that the mechanism of enhanced oxidation of Si promoted by multilayers of K deposited on its surface is based on the formation of potassium oxides, identified as K2O2 and KO2, that transfer oxygen efficiently to the Si substrate upon annealing at 900 K.Keywords
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