Optical characterization of ZnSe/ZnS strained-layer superlattices grown on CaF2 substrates

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Abstract
Growth of ZnSe/ZnS strained‐layer superlattices on CaF2 substrates has been demonstrated for the first time. Optical transmission measurements at 77 K were carried out to investigate the optical property of excitons confined in ZnSe/ZnS multiquantum wells. Two exciton peaks related to the transitions between n=1 electron and heavy hole (Ee–hh) and between n=1 electron and light hole (Ee–lh) were observed in the transmission spectra. The energy seperation between Ee–hh and Ee–1h increases with decreasing the ZnSe layer thickness, which is due to the increase of strain in the ZnSe well layer. From the relationship between ZnSe well layer thickness and peak energy, the quantum size effect in the quantum well was also confirmed.