Investigations on the Formation of SiO2in Si+-Implanted Al2O3
- 1 October 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (10A) , L1451
- https://doi.org/10.1143/jjap.32.l1451
Abstract
We measured Raman spectra of Si+-implanted Al2O3at room temperature before and after annealing in vacuum. It is found that SiO2is formed even before annealing and the Raman band attributed to the network Si-O-Si symmetric-stretching vibration mode grows with annealing between 300°C and 500°C. It is also found that Al atoms are emitted from the surface of Al2O3with annealing above 900°C. In forming SiO2in the surface layer of Al2O3, implanted Si atoms obtain oxygen atoms from Al2O3by breaking Al-O-Al bonds. We discuss the chemical reactions of implanted Si atoms with Al2O3induced by ion implantation and subsequent thermal annealing.Keywords
This publication has 11 references indexed in Scilit:
- Visible photoluminescence related to Si precipitates in Si+-implanted SiO2Journal of Physics: Condensed Matter, 1993
- Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphireSurface and Coatings Technology, 1992
- Formation of small metallic precipitates of niobium in α-Al2O3 implanted with niobium ionsSurface and Coatings Technology, 1992
- Microstructural and chemical effects in Al2O3 implanted with iron at 77 K and annealed in oxidizing or reducing atmospheresJournal of Materials Research, 1991
- Microstructural and chemical effects in Al2O3 implanted with iron at room temperature and annealed in oxidizing or reducing atmospheresJournal of Materials Research, 1991
- Evidence for solid-phase migration of Si atoms in laser-irradiated, Si+-implanted SiO2Journal of Physics: Condensed Matter, 1989
- Anomalous Defect Processes in Silicon-Implanted SiO2Japanese Journal of Applied Physics, 1989
- Sialon formation by Si+ and N2 + ion implantation into sapphireJournal of Materials Science, 1987
- Ion implantation effects in crystalline inorganic insulatorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Measurements of Raman intensities and pressure dependence of phonon frequencies in sapphireJournal of Applied Physics, 1981