Current-voltage characteristics of ideal silicon diodes in the range 300–400 K
- 15 January 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2) , 646-647
- https://doi.org/10.1063/1.334758
Abstract
Current-voltage characteristics of silicon diodes which were found to be ideal at room temperature have been investigated in the range 300–400 K. The diodes remain ideal at higher temperatures, too.This publication has 2 references indexed in Scilit:
- Mechanism of non-Shockley conduction in almost ideal silicon junction diodesJournal of Applied Physics, 1984
- A comparison of gettering techniques for very large scale integrationJournal of Applied Physics, 1984