Capacitively detected magnetic resonance of defects in MOSFETs
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 1027-1030
- https://doi.org/10.1016/s0921-4526(99)00629-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processingApplied Physics Letters, 1996
- Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2Applied Physics Letters, 1996
- Defects in Si Thin-Film Transistors Studied by Spin-Dependent TransportPublished by Japan Society of Applied Physics ,1996
- Electron spin resonance of defects in silicon-on-insulator structures formed by oxygen implantation: Influence of γ irradiationJournal of Applied Physics, 1991
- Spin dependent recombination at the silicon/silicon dioxide interfaceColloids and Surfaces, 1990
- Spin-dependent and localisation effects at Si/SiO2device interfacesSemiconductor Science and Technology, 1989
- Vacancy in silicon: Hyperfine interactions from electron-nuclear double resonance measurementsPhysical Review B, 1987
- Capacitance detected magnetic resonance in γ-irradiated p+-i-n+silicon diodesSemiconductor Science and Technology, 1986
- Classification of Defects in Silicon after Their g−;ValuesPhysica Status Solidi (b), 1983
- Observation of Spin-Dependent Thermal Emission from Deep Levels in SemiconductorsPhysical Review Letters, 1983