Persistent photoconductivity in InGaN/GaN multiquantum wells
- 15 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (3) , 338-340
- https://doi.org/10.1063/1.1340000
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Field-enhanced Stokes shifts in tensilely strained carbon-based quantum wellsApplied Physics Letters, 1999
- Effects of alloy potential fluctuations in InGaN epitaxial filmsSemiconductor Science and Technology, 1999
- Exciton localization in InGaN quantum well devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescenceApplied Physics Letters, 1998
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- The long-term relaxation and build-up transient of photoconductivity in Si1-xGex/Si quantum wellsJournal of Physics: Condensed Matter, 1995
- Persistent photoconductivity inTe semiconductor thin filmsPhysical Review B, 1993
- Kinetics of optically generated defects in hydrogenated amorphous siliconPhysical Review B, 1991
- Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous siliconPhysical Review Letters, 1987