A closer study on the self-annihilation of antiphase boundaries in GaAs epilayers
- 1 June 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 163 (3) , 203-211
- https://doi.org/10.1016/0022-0248(95)00975-2
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- On the formation of antiphase domains in the system of GaAs on GeJournal of Crystal Growth, 1996
- On the sublattice location of GaAs grown on GeJournal of Applied Physics, 1994
- Growth mechanism of GaP on Si substrate by MOVPEJournal of Crystal Growth, 1991
- Antiphase-domain-free InP on Si(001): optimization of MOCVD processJournal of Crystal Growth, 1991
- Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxyJournal of Crystal Growth, 1987
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987
- MOCVD GaAs growth on Ge (100) and Si (100) substratesJournal of Crystal Growth, 1986
- Nucleation and growth of GaAs on Ge and the structure of antiphase boundariesJournal of Vacuum Science & Technology B, 1986
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Antiphase boundaries in semiconducting compoundsJournal of Physics and Chemistry of Solids, 1969