Growth mechanism of GaP on Si substrate by MOVPE
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 158-163
- https://doi.org/10.1016/0022-0248(91)90731-j
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Growth of antiphase-domain-free GaP on Si by organometallic vapor phase epitaxyJournal of Crystal Growth, 1988
- MOCVD growth and characterization of GaP on SiJournal of Crystal Growth, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Electrical and optical properties of GaP grown on Si by MOVPEJournal of Crystal Growth, 1984
- MO-CVD growth of GaP and GaAlPJournal of Crystal Growth, 1981