Silicon near-surface disorder and etch residues caused by CCIF3/H2 reactive ion etching
- 1 April 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (7) , 686-688
- https://doi.org/10.1063/1.95530
Abstract
The effects of SiO2 reactive ion etching (RIE) in CClF3/H2 on the surface properties of the underlying Si substrate have been studied by photoemission and He ion scattering/channeling techniques. We find that RIE introduces a F, C, and Cl containing layer on the Si surface. Furthermore, displacement damage is introduced in the Si near‐surface region during RIE processing. The efficacy of O2 plasma or rapid thermal annealing RIE post‐treatments for removal of contamination and/or displacement damage has been investigated.Keywords
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