Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (11) , 582-584
- https://doi.org/10.1109/55.9283
Abstract
RF plasma-enhanced chemical vapor deposition (PECVD) has been used to deposit blanket tungsten on silicon dioxide for MOS gate formation. A range of deposition conditions are investigated. A postdeposition high-temperature anneal is necessary to reduce the resistivity and improve the adhesion of the film. Capacitors fabricated with the tungsten gate show good electrical properties with no apparent detrimental effects caused by the presence of either the plasma or fluorine during the deposition.Keywords
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