Low-Temperature Microwave Plasma Etching of Crystalline Silicon
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12R)
- https://doi.org/10.1143/jjap.30.3319
Abstract
Low-temperature microwave plasma etching of crystalline silicons is described. Vertical and lateral etch rates of Si and the selectivities of Si to photoresist are measured as a function of water temperature within a range of -150 to +30° for SF6, and (3) the selectivities become high at low temperatures (e.g., >40 at -90°C and 2.3 Pa). This etching enables highly anisotropic Si etching at a high etch rate and high selectivity with fluoride gases. Less-polymerizing-type gases can provide high etch rates. An etching model of the ion-bombarded surfaces in discussed. The model implies that separate control of the side wall reaction and the horizontal surface reaction is archived by the low-temperature etching.Keywords
This publication has 21 references indexed in Scilit:
- Temperature and flow effects in aluminum etching using bromine-containing plasmasJournal of Vacuum Science & Technology B, 1988
- In situ silicon-wafer temperature measurements during RF argon-ion plasma etching via fluoroptic thermometryJournal of Physics D: Applied Physics, 1987
- Basic chemistry and mechanisms of plasma etchingJournal of Vacuum Science & Technology B, 1983
- High resolution trilevel resistJournal of Vacuum Science and Technology, 1982
- Thirteenth annual Pittsburgh conference on modeling and simulationSolid-State Electronics, 1982
- Chemical and Physical Sputtering in F+ Ion Beam Etching of SiJapanese Journal of Applied Physics, 1981
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Reactive ion etching of siliconJournal of Vacuum Science and Technology, 1979
- Competitive Mechanisms in Reactive Ion Etching in a CF 4 PlasmaJournal of the Electrochemical Society, 1979
- Microwave Plasma EtchingJapanese Journal of Applied Physics, 1977