Characterization of InGaN/GaN heterostructures by means of RBS/channeling
- 1 March 2000
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 161-163, 539-543
- https://doi.org/10.1016/s0168-583x(99)00840-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indiumPhilosophical Magazine A, 1999
- Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling studyApplied Physics Letters, 1999
- Phase separation and ordering in InGaN alloys grown by molecular beam epitaxyJournal of Applied Physics, 1998
- Large band gap bowing of InxGa1−xN alloysApplied Physics Letters, 1998
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- Phase separation in InGaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1998
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- Incomplete Solubility in Nitride AlloysMRS Proceedings, 1996
- Microstructural characteristics of mixed III–V epitaxial layersMaterials Science and Engineering: B, 1995
- Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and propertiesJournal of Applied Physics, 1993