Photoluminescence and photoluminescence excitation studies on CuInSe/sub 2/ absorber layers for solar cells
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 817-820
- https://doi.org/10.1109/pvsc.1996.564253
Abstract
We perform a systematic photoluminescence (PL) study on CuInSe/sub 2/ solar cell absorber layers. In particular, we investigate Cu/In-ratios from 1.47 to 0.46 which show that the PL response is strongly correlated to the composition. Detailed information about origin and distribution of various defect levels is obtained. Additionally, the influence of sodium diffusion from the substrate on the optical response is investigated.Keywords
This publication has 7 references indexed in Scilit:
- Photoluminescence of polycrystalline CuInSe2 thin filmsApplied Physics Letters, 1996
- Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2Journal of Applied Physics, 1993
- A model for the successful growth of polycrystalline films of CuInSe2 by multisource physical vacuum evaporationAdvanced Materials, 1993
- Polarization‐Dependent Infrared Reflectivity Spectra of CuInSe2Physica Status Solidi (b), 1983
- Frequency Shift with Temperature as Evidence for Donor-Acceptor Pair Recombination in Relatively Pure-Type GaAsPhysical Review B, 1967
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960