Optimum growth and properties of ZnS/GaAs(100) epilayers by hot-wall epitaxy
- 1 November 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 194 (1) , 61-69
- https://doi.org/10.1016/s0022-0248(98)00541-7
Abstract
No abstract availableKeywords
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