Morphology of Si nanowires synthesized by high-temperature laser ablation
- 13 May 1999
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (11) , 7981-7983
- https://doi.org/10.1063/1.369389
Abstract
Silicon nanowires have been synthesized by laser ablation of Si powder targets at 1200 °C. Transmission electron microscopy study showed that most Si nanowires had smooth surfaces and nearly the same diameter of about 16 nm. Beside the most abundant smooth-surface nanowires, four other forms of nanowires, named spring-shaped, fishbone-shaped, frog-egg-shaped, and necklace-shaped nanowires, were observed. The formation of nanowires into different shapes was explained by the two-step growth model based on the vapor–liquid–solid mechanism.This publication has 20 references indexed in Scilit:
- Large Scale Synthesis of Silicon Nanowires by Laser AblationMRS Proceedings, 1998
- Si nanowire growth with ultrahigh vacuum scanning tunneling microscopyApplied Physics Letters, 1997
- Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiationApplied Physics Letters, 1996
- Influence of growth conditions on morphology, composition, and electrical properties of n-Si wiresPhysica Status Solidi (a), 1996
- Adsorption of β-radioactive 8Li on single crystal surfaces: Thermal desorption spectroscopy and nuclear magnetic resonance experimentsJournal of Vacuum Science & Technology A, 1995
- Boron Nitride NanotubesScience, 1995
- Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 KApplied Physics Letters, 1995
- Synthesis and characterization of carbide nanorodsNature, 1995
- Doping Graphitic and Carbon Nanotube Structures with Boron and NitrogenScience, 1994
- Helical microtubules of graphitic carbonNature, 1991