Pseudopotential and k.p band parameters for GaAs, InP and InSb
- 1 October 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (10) , 963-968
- https://doi.org/10.1088/0268-1242/6/10/002
Abstract
Matrix elements of momentum and of the spin-orbit interaction are calculated for GaAs, InP and InSb using the empirical pseudopotential method. The obtained values are shown to be in reasonable agreement with those determined from the description of various magneto-optical data by the five-level k.p model. The authors demonstrate a necessity of employing the complete pseudopotential wave functions (including the core states) in realistic calculations of band parameters.Keywords
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