Sub-50 nm high aspect-ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching
- 22 March 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (12) , 1414-1416
- https://doi.org/10.1063/1.108696
Abstract
We present the fabrication of sub-50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultrahigh resolution electron beam lithography and chlorine based reactive ion etching. These nanoscale Si features can be further reduced to 10 nm using an additional HF wet etch. No photoluminescence was observed from arrays of 10 nm Si structures passivated with HF.Keywords
This publication has 14 references indexed in Scilit:
- Photolithographic fabrication of micron-dimension porous Si structures exhibiting visible luminescenceApplied Physics Letters, 1992
- Effect of Gas Species on the Depth Reduction in Silicon Deep-Submicron Trench Reactive Ion EtchingJapanese Journal of Applied Physics, 1991
- Chlorine or bromine chemistry in reactive ion etching Si-trench etchingPublished by SPIE-Intl Soc Optical Eng ,1991
- Single-crystal silicon trench etching for fabrication of highly integrated circuitsPublished by SPIE-Intl Soc Optical Eng ,1991
- Double 15-nm-wide metal gates 10 nm apart and 70 nm thick on GaAsJournal of Vacuum Science & Technology B, 1990
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Characterization of BCl3 ‐ Cl2 Silicon Trench EtchingJournal of the Electrochemical Society, 1990
- Three-Dimensional Quantum Well Effects in Ultrafine Silicon ParticlesJapanese Journal of Applied Physics, 1988
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979
- Reactive ion etching of siliconJournal of Vacuum Science and Technology, 1979