A quantitative approach for spatially-resolved electron energy-loss spectroscopy of grain boundaries and planar defects on a subnanometer scale
- 31 July 1995
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 59 (1-4) , 215-227
- https://doi.org/10.1016/0304-3991(95)00030-5
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Electron energy loss spectrometry mappingMicrochimica Acta, 1994
- Chemistry of grain boundaries in calcia doped silicon nitride studied by spatially resolved electron energy-loss spectroscopyAnalytica Chimica Acta, 1994
- Calcium Concentration Dependence of the Intergranular Film Thickness in Silicon NitrideJournal of the American Ceramic Society, 1994
- Statistical Analysis of the Intergranular Film Thickness in Silicon Nitride CeramicsJournal of the American Ceramic Society, 1993
- Spatially resolved electron energy-loss near-edge structure analysis of a near Σ = 11 tilt boundary in sapphireMicroscopy Microanalysis Microstructures, 1993
- Detection of nitrogen at {100} platelets in a type IaA/B diamondPhilosophical Magazine Letters, 1992
- Grain‐Boundary Chemistry of Barium Titanate and Strontium Titanate: I, High‐Temperature Equilibrium Space ChargeJournal of the American Ceramic Society, 1990
- Theoretical Studies of the Electronic Properties of Ceramic MaterialsJournal of the American Ceramic Society, 1990
- Electron-energy-loss studies of dislocations in diamondPhysical Review B, 1989
- Study of theedges in thetransition metals and their oxides by electron-energy-loss spectroscopy with comparisons to theoryPhysical Review B, 1982