Investigations of growth defects in solution-grown GaxIn1−xP with a SEM operating in the cathodoluminescence mode
- 16 July 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 36 (1) , 173-179
- https://doi.org/10.1002/pssa.2210360118
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electroreflectance and Wavelength Modulation Study of the Direct and Indirect Fundamental Transition Region of In1−xGaxPPhysica Status Solidi (b), 1976
- Hall Mobility of Te-Doped In1-xGaxP at 300 KJapanese Journal of Applied Physics, 1974
- A Scanning Electron Microscope Study of In[sub 1−x]Ga[sub x]PJournal of the Electrochemical Society, 1974
- Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solutionJournal of Applied Physics, 1973
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- Reproducible Preparation of Homogeneous In1−xGaxP Mixed CrystalsApplied Physics Letters, 1971
- Solution growth of homogeneous GaxIn1−xP alloysPhysica Status Solidi (a), 1971
- Electronic Structure and Luminescence Processes in In1−xGaxP AlloysJournal of Applied Physics, 1971
- Calculation of the Ga-In-P Ternary Phase Diagram Using the Quasi-Chemical Equilibrium ModelJournal of the Electrochemical Society, 1970
- Theoretical analysis of requirements for crystal growth from solutionJournal of Crystal Growth, 1968