High speeds in a single chip
- 17 November 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave Magazine
- Vol. 10 (7) , 28-33
- https://doi.org/10.1109/mmm.2009.934691
Abstract
This article reviews the development and breakthrough of SiGe technologies. SiGe HBTs with transit frequencies ft and maximum oscillation frequencies fmax above 300 GHz and monolithic integrated millimeter-wave circuits based on these HBTs have been developed by several groups. As this paper shows in the overview, the combination of active devices with passive planar structures, including antenna elements, allows single-chip realizations of complete millimeter-wave front-ends.Keywords
This publication has 27 references indexed in Scilit:
- A fully differential low-power high-linearity 77-GHz SiGe receiver frontend for automotive radar systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave ImagingIEEE Journal of Solid-State Circuits, 2008
- A 77GHz 4-channel automotive radar transceiver in SiGePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- 170-GHz transceiver with on-chip antennas in SiGe technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- 165-GHz Transceiver in SiGe TechnologyIEEE Journal of Solid-State Circuits, 2008
- A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level ControlIEEE Journal of Solid-State Circuits, 2007
- A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and AntennasIEEE Journal of Solid-State Circuits, 2006
- A New Regenerative Divider by Four up to 160 GHz in SiGe Bipolar TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- A low-noise, and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- 86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003