A fully differential low-power high-linearity 77-GHz SiGe receiver frontend for automotive radar systems
- 1 April 2009
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents a single-chip receiver frontend consisting of a low-noise amplifier and an active downconversion mixer, intended for application in automotive radar systems at 77 GHz. The circuit has been implemented in a SiGe:C HBT technology with ft/fmax = 200/250 GHz and can operate either fully differential or in single-ended mode. The receiver frontend shows a conversion gain of 24 dB and a single sideband noise figure of 14 dB when driven single-ended. Linearity measurements show a 1 dB input referred compression point of -10 dBm. The circuit draws 40 mA from a 3.3 V supply and occupies a chip area of 728 times 1028 mum2 including bond pads.Keywords
This publication has 14 references indexed in Scilit:
- SiGe Receiver Front Ends for Millimeter-Wave Passive ImagingIEEE Transactions on Microwave Theory and Techniques, 2008
- Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave ImagingIEEE Journal of Solid-State Circuits, 2008
- A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive RadarIEEE Journal of Solid-State Circuits, 2008
- A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- A Low-Power Micromixer with High Linearity for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and AntennasIEEE Journal of Solid-State Circuits, 2006
- An 80 GHz SiGe Quadrature Receiver FrontendPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2006
- A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- 3.3 ps SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005