Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN

Nonequilibrium electron transport in a high-quality, single-crystal, wurtzite structure InN thin film grown on GaN has been investigated by picosecond Raman spectroscopy. Our experimental results show that an electron drift velocity as high as ${\text{(5.0±0.5)×10}}^7\hspace{0.17em}\mathrm{cm/s}$ can be achieved at $\text{T=300\hspace{0.17em}}\mathrm{K}.$ The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric-field intensity inside our InN thin-film system is about 75 kV/cm.