Subpicosecond carrier lifetimes in radiation-damaged GaAs
- 29 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (17) , 1881-1883
- https://doi.org/10.1063/1.105061
Abstract
We investigate the dependence of carrier lifetimes in radiation-damaged, GaAs on proton implantation dose by means of time-resolved reflectivity and photoconductivity experiments with subpicosecond resolution. The carrier lifetimes decrease with increasing implantation dose at low implantation levels whereas beyond the ‘‘amorphization dose’’ a saturation at 0.5 ps can be observed due to a saturation of the defect density.Keywords
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