Reflectivity and transmittance investigations of photoexcited charge carriers in silicon in the picosecond time domain
- 1 June 1987
- journal article
- solid and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 43 (2) , 97-104
- https://doi.org/10.1007/bf00617960
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- The diffraction of light by transient gratings in crystalline, ion-implanted, and amorphous siliconIEEE Journal of Quantum Electronics, 1986
- Ultrafast relaxation dynamics of photoexcited carriers in GaAs and related compoundsJournal of the Optical Society of America B, 1985
- Femtosecond Orientational Relaxation of Photoexcited Carriers in GaAsPhysical Review Letters, 1984
- Picosecond time-resolved reflectivity and transmission at 1.9 and 2.8 μm of laser-generated plasmas in silicon and germaniumApplied Physics Letters, 1984
- Time-resolved temperature measurement of picosecond laser irradiated siliconApplied Physics Letters, 1983
- Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in SiliconPhysical Review Letters, 1983
- Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effectsPhysical Review B, 1982
- Freie Elektronen in FestkörpernPublished by Springer Nature ,1979
- Picosecond time resolved reflectivity of direct gap semiconductorsSolid State Communications, 1978
- Picosecond Ellipsometry of Transient Electron-Hole Plasmas in GermaniumPhysical Review Letters, 1974