Si-SiO2 interface states enhanced by oxidation-induced stacking faults
- 11 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (19) , 2389-2390
- https://doi.org/10.1063/1.107006
Abstract
It has been observed for the first time that interface states of Si metal‐oxide‐semiconductor diode are enhanced by the influence of oxidation‐induced stacking faults (OSF). The observation has been carried out by isothermal capacitance transient spectroscopy measurement, using two kinds of samples. The samples are cut from the same CZ‐Si wafer with ‘‘ring OSF.’’ One is prepared from the region with ‘‘ring OSF’’ and the other is prepared from the defect‐free region.Keywords
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