Fabrication of MOS Nanostructure by Employing Electron Beam Lithography and Anisotropic Wet Etching of Silicon
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3A) , L415
- https://doi.org/10.1143/jjap.30.l415
Abstract
Ultrafine metal/SiO2/Si (MOS) structures have been fabricated by combining the technologies of electron beam lithography and anisotropic wet etching of Si. The etching condition has been optimized in terms of the composition of the etchant and temperature. A MOS structure of narrower than 20 nm with specular sidewalls has been obtained, which will be useful for the application of ultrasmall devices such as quantum effect transistors of Si.Keywords
This publication has 4 references indexed in Scilit:
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