Abstract
Angle-resolved photoemission spectroscopy is used to measure the width Ωs.o.=Γ7-X6 of the split-off valence band in Cd0.8 Zn0.2Te(100). We find an increase in the alloy bandwidth which is ∼2 times larger than the value expected from a linear alloy model (Vegard’s rule). Using CdTe as a reference material, we determined a bowing parameter bp∼0.65 eV for the split-off-band width in Cd1x ZnxTe alloys. The virtual-crystal approximation (VCA) works well for the upper valence bands but fails to describe the more localized d states. Chemical differences and the size mismatch between Cd and Zn atoms lead to pronounced deviations from the VCA behavior. The appearance of distinctly split Cd 4d- and Zn 3d-band emissions which we observe is outside the scope of the VCA, lending support to more sophisticated structural models which incorporate disparate Cd and Zn atoms for binary semiconducting alloys.