All selective MOVPE grown BH-LDs fabricated by the novel self-alignment process
- 1 February 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (2) , 179-181
- https://doi.org/10.1109/68.484233
Abstract
1.3 μm-strained MQW BH LDs with a current blocking structure have been developed by selective MOVPE and a newly developed self-alignment process; we call these devices ASM (all selective MOVPE grown)-BH-LDs. The fabrication process, which completely eliminates semiconductor etching, is very promising to realize high-performance LDs with excellent uniformity and reproducibility. The light output power was remarkably improved by a factor of two, compared with previous selective MOVPE-LDs.Keywords
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