Electronic properties of two-dimensional electron gas in pseudomorphic InxGa1−xAs/N-In0.52Al0.48As heterostructures

This publication has 8 references indexed in Scilit:

• Current-gain cutoff frequency comparison of InGaAs HEMTs
  IEEE Electron Device Letters, 1988
• Interface roughness scattering in GaAs/AlAs quantum wells
  Applied Physics Letters, 1987
• Enhancement in excitonic absorption due to overlap in heavy-hole and light-hole excitons in GaAs/InAlGaAs quantum well structures
  Applied Physics Letters, 1987
• 0.1-µm Gate-length pseudomorphic HEMT's
  IEEE Electron Device Letters, 1987
• Extremely High 2DEG Concentration in Selectively Doped In_0.53Ga_0.47As/N-In_0.52Al_0.48As Heterostructures Grown by MBE
  Japanese Journal of Applied Physics, 1987
• Large valence-band nonparabolicity and tailorable hole masses in strained-layer superlattices
  Applied Physics Letters, 1986
• Interface roughness scattering in normal and inverted In_0.53Ga_0.47As—In_0.52Al_0.48As modulation-doped heterostructures
  IEEE Electron Device Letters, 1986
• Light-hole conduction in InGaAs/GaAs strained-layer superlattices
  Applied Physics Letters, 1985