Piezoresponse force microscopy for polarity imaging of GaN
- 3 June 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (22) , 4166-4168
- https://doi.org/10.1063/1.1483117
Abstract
The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution.
Keywords
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