Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy
- 1 March 2000
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 29 (3) , 274-280
- https://doi.org/10.1007/s11664-000-0062-z
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- High-power 10-GHz operation of AlGaN HFET's on insulating SiCIEEE Electron Device Letters, 1998
- Fabrication of GaN field emitter arrays by selective area growth techniqueJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- GaN field emitter array diode with integrated anodeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Microwave performance of AlGaN/GaN inverted MODFET'sIEEE Electron Device Letters, 1997
- Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxyApplied Physics Letters, 1997
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- The Blue Laser DiodePublished by Springer Nature ,1997
- CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHzIEEE Electron Device Letters, 1996
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996