GaN field emitter array diode with integrated anode
- 1 March 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (2) , 822-825
- https://doi.org/10.1116/1.589914
Abstract
Field emission was observed from GaN field emitter ar- rays ~FEAs! with integrated anodes. GaN is currently being investigated as a material for FEAs because it may possess certain material advantages for long-life and stable cold elec- tron emitters. The results reported herein improve upon pre- vious work on GaN FEAs that used an external electrode to extract and collect the field emitted electrons.1,2 The large physical separation of the emitters and the external anode led to high impressed voltages ~kV! necessary to induce emis- sion. The high impressed voltages made the devices suscep- tible to damaging arcs and limited the current capability of the anode. The premature damage of the arrays limited our ability to investigate the physics and electrical properties of the FEAs. In response to this limitation, a design incorporat- ing an integrated anode was proposed and successfully fab-Keywords
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