On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
- 1 November 2000
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 222 (1) , 219-244
- https://doi.org/10.1002/1521-3951(200011)222:1<219::aid-pssb219>3.0.co;2-u
Abstract
No abstract availableKeywords
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