Temperature dependence of intrinsic carrier concentration and density of states effective mass of heavy holes in InSb
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 49 (10) , 1179-1185
- https://doi.org/10.1016/0022-3697(88)90173-4
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Precise Measurement of the Free Electron g‐Factor in InSbPhysica Status Solidi (b), 1986
- Two-photon magnetoabsorption spectroscopy in-InSb with cw ClasersPhysical Review B, 1982
- Quantum resonances in the valence band of zinc-blende semiconductors. II. Results for-InSb under uniaxial stressPhysical Review B, 1979
- Temperature dependence of the electron effective mass in InSbPhysical Review B, 1974
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical BondPhysical Review Letters, 1971
- Inversion-Asymmetry and Warping-Induced Interband Magneto-Optical Transitions in InSbPhysical Review B, 1969
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- Evidence from Cyclotron-Resonance Measurements for Spin-Degeneracy Splitting of the Valence Band of InSb NearPhysical Review Letters, 1966
- Hall Effect and Conductivity of InSbPhysical Review B, 1955