Electron mobility in heavily doped gallium arsenide
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (2) , 715-722
- https://doi.org/10.1063/1.1662249
Abstract
The effects of electron‐electron scattering and nonparabolic energy band shape on electron mobility in degenerate materials are investigated. Mobility calculations as a function of electron concentration and temperature are compared to experimental data. Electron‐electron scattering is found to only slightly reduce electron mobility. The nonparabolic band shape is found to significantly reduce the magnitude and alter the temperature dependence of electron mobility.This publication has 17 references indexed in Scilit:
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