Self-consistent model of minority-carrier lifetime, diffusion length, and mobility

1 August 1991

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 12 (8) , 401-403
https://doi.org/10.1109/55.119145

Abstract

A self-consistent approach is proposed for extracting the minority-carrier mobility from fits to experimental data for lifetime and diffusion length and then comparing the extracted mobility to experimental mobility data. A value for electron and hole lifetime is extracted using a doping-dependent Shockley-Read-Hall mechanism with an Auger process. The hole lifetime is used to extract a minority carrier hole mobility that is consistent with the reported measurements of the hole diffusion length. The good agreement between extracted and experimental mobilities justifies incorporating the results into numerical device and circuit CAD tools.<>

Keywords

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