The effect of nonuniform gain on the multiplication noise of InP/InGaAsP/ InGaAs avalanche photodiodes
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 21 (12) , 1858-1861
- https://doi.org/10.1109/jqe.1985.1072608
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Gain uniformity of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regionsIEEE Journal of Quantum Electronics, 1985
- Measurements of the statistics of excess noise in separate absorption, grading and multiplication (SAGM) avalanche photodiodesElectronics Letters, 1984
- Multiplication noise in planar InP/InGaAsP heterostructure avalanche photodiodesApplied Physics Letters, 1982
- Excess-noise and receiver sensitivity measurements of In 0.53 Ga 0.47 As/InP avalanche photodiodesElectronics Letters, 1981
- Detailed performance characteristics of hybrid InP-InGaAsP APD'sIEEE Electron Device Letters, 1981
- Performance of InxGa1-xAsyP1-yphotodiodes with dark current limited by diffusion, generation recombination, and tunnelingIEEE Journal of Quantum Electronics, 1981
- New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength regionIEEE Journal of Quantum Electronics, 1980
- Impact ionisation ratio in In 0.73 Ga 0.27 As 0.57 P 0.43Electronics Letters, 1978
- The distribution of gains in uniformly multiplying avalanche photodiodes: TheoryIEEE Transactions on Electron Devices, 1972
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966