Localisation of electrical-insulation- and partial-discharge failures of IGBT modules
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (01972618) , 1453-1458
- https://doi.org/10.1109/ias.1999.801691
Abstract
The partial discharge (PD) and insulation resistance is very important in view of the increasing operating voltages of IGBT modules. Partial discharge spectroscopy showed that the PDs from metallisation edges and interfaces in silicone gel were the main sources of PD at high voltages. It also allows these types of PD to be clearly distinguished. As the PDs from interfaces in silicone gel increase strongly at high voltages, it is especially important for the silicone gel to adhere well to the ceramic.Keywords
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