Low temperature growth of r.f. reactively planar magnetron-sputtered AlN films
- 1 April 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 259 (2) , 154-162
- https://doi.org/10.1016/0040-6090(94)06450-4
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- AlN films for SAW sensorsSensors and Actuators A: Physical, 1991
- Optical properties of aluminum oxynitrides deposited by laser-assisted CVDApplied Optics, 1986
- Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial FilmsIEEE Transactions on Sonics and Ultrasonics, 1985
- Quantitative ion beam process for the deposition of compound thin filmsApplied Physics Letters, 1983
- Aluminum nitride on silicon surface acoustic wave devicesApplied Physics Letters, 1981
- Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminumJournal of Applied Physics, 1981
- Aluminum nitride films by rf reactive ion-platingJournal of Vacuum Science and Technology, 1980
- Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputteringApplied Physics Letters, 1980
- Epitaxial growth of aluminum nitride films on sapphire by reactive evaporationApplied Physics Letters, 1975
- Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphireApplied Physics Letters, 1973