Free-carrier concentration in n-doped InP crystals determined by Raman scattering measurements
- 1 June 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 50 (1-4) , 295-299
- https://doi.org/10.1016/0169-4332(91)90185-m
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Concentration-dependent absorption and photoluminescence of n-type InPJournal of Applied Physics, 1985
- Free Carrier Reduction in Vacuum‐Annealed S‐, Sn‐, and Ge‐Doped (100) InPJournal of the Electrochemical Society, 1984
- Electrooptic Properties and Raman Scattering in InPJapanese Journal of Applied Physics, 1984
- Correlation of Fermi-level energy and chemistry at InP(100) interfacesApplied Physics Letters, 1983
- First-order Raman line intensity ratio in GaAs: a potential lattice perfection scaleJournal of Physics C: Solid State Physics, 1983
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- LO‐Phonon‐Plasmon Dispersion in GaAs Hydrodynamical Theory and Experimental ResultsPhysica Status Solidi (b), 1981
- Raman scattering studies of surface space charge layers and Schottky barrier formation in InPJournal of Vacuum Science and Technology, 1979
- Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAsApplied Physics A, 1978