Highly efficient laterally oxidized λ=950 nm InGaAs-AlGaAs single-mode lasers
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 5 (3) , 701-706
- https://doi.org/10.1109/2944.788438
Abstract
No abstract availableKeywords
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