Physical model for burst noise in semiconductor devices
- 31 July 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (7) , 1055-1071
- https://doi.org/10.1016/0038-1101(70)90102-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Electron tunneling and contact resistance of metal-silicon contact barriersPublished by Elsevier ,2002
- Characterization of burst noise in silicon devicesSolid-State Electronics, 1969
- Bistable Current Fluctuations in Reverse-Biased p-n Junctions of GermaniumJournal of Applied Physics, 1967
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Burst noise of silicon planar transistorsElectronics Letters, 1966
- Characteristics of burst noiseProceedings of the IEEE, 1965
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957