Study of Annealed Silicon Single Crystals by X-Ray Diffraction Micrography
- 1 September 1963
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 2 (9) , 585-586
- https://doi.org/10.1143/jjap.2.585
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Direct Observation of Imperfections in Semiconductor Crystals by Anomalous Transmission of X RaysJournal of Applied Physics, 1962
- X-Ray Observations of Lattice Defects in Particular, Stacking Faults in the Neighbourhood of a Twin Boundary in Silicon Single CrystalsJournal of the Physics Society Japan, 1962
- Loop Shaped Images Observed in X-Ray Diffraction Micrographs of Silicon Single CrystalsJournal of the Physics Society Japan, 1962
- Studies of Individual Dislocations in Crystals by X-Ray Diffraction MicroradiographyJournal of Applied Physics, 1959
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957
- Effect of Oxygen on the Carrier Life-time in SiliconNature, 1957
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957