Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (5) , 194-195
- https://doi.org/10.1109/75.134352
Abstract
The high-speed and noise performance of 0.15- mu m gate GaAs MESFETs for microwave and millimeter-wave IC applications is reported. The best extrinsic f/sub t/ is 109 GHz without correction for pad parasitics, which is equivalent to an intrinsic f/sub t/ of 134 GHz. The 0.15- mu m*200- mu gate GaAs MESFET achieved a 0.6-dB noise figure with a 17-dB associated gain at 10 GHz and a 0.9-dB noise figure with a 13-dB associated gain at 18 GHz. The measured noise figure and associated gain are the best reported for GaAs MESFETs and are comparable to the best noise/gain performance of HEMTs and P-HEMTs.<>Keywords
This publication has 8 references indexed in Scilit:
- Super low-noise self-aligned gate GaAs MESFET with noise figure of 0.87 dB at 12 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ultrahigh-speed HEMT LSI technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-performance and high-yield Ka-band low-noise MMIC using 0.25- mu m ion-implanted MESFET'sIEEE Microwave and Guided Wave Letters, 1991
- A technique for correction of parasitic capacitance on microwave f/sub t/ measurements of MESFET and HEMT devicesIEEE Transactions on Microwave Theory and Techniques, 1991
- Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors?Applied Physics Letters, 1990
- Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHzIEEE Electron Device Letters, 1989
- Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistorsApplied Physics Letters, 1984
- Silicon implanted super low-noise GaAs MESFETElectronics Letters, 1982