Residual Strain Dependence of Stimulated Emission in GaN Layers Grown on (0001) Sapphire Substrates
- 1 September 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (9A) , L1023
- https://doi.org/10.1143/jjap.37.l1023
Abstract
We have grown 1.5 µm-thick GaN layers on (0001) sapphire substrates by metalorganic chemical vapor deposition with various flow rates of trimethylgallium. The lattice constants a and c in the layer were estimated by X-ray diffraction. The threshold power density for stimulated emission was measured by photopumping the layers. It was found that the grown layers were elastically deformed and that the residual strain can be sustained by decreasing the flow rate of trimethylgallium. It was also found that the threshold power density of stimulated emission decreases as the lattice constant a decreases. This tendency indicates that the strain relaxation mechanism is associated with enhancement of nonradiative recombination.Keywords
This publication has 10 references indexed in Scilit:
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the StrainJapanese Journal of Applied Physics, 1992
- Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer LayerJapanese Journal of Applied Physics, 1990
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire SubstratesJapanese Journal of Applied Physics, 1988
- Study of cracking mechanism in GaN/α-Al2O3 structureJournal of Applied Physics, 1985
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971