The influence of atomic mixing on SIMS depth profiling of thin buried layers
- 15 December 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 218 (1) , 687-690
- https://doi.org/10.1016/0167-5087(83)91066-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Secondary ion mass spectrometry and its relation to high-energy ion beam analysis techniquesNuclear Instruments and Methods in Physics Research, 1981
- Implantation and ion beam mixing in thin film analysisNuclear Instruments and Methods, 1981
- A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. finite range approximationRadiation Effects, 1981
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- Depth dependence of atomic mixing by ion beamsApplied Physics Letters, 1979
- Preferred sputtering on binary alloy surfaces of the AlPdSi systemSurface Science, 1979
- Influence of atomic mixing and preferential sputtering on depth profiles and interfacesJournal of Vacuum Science and Technology, 1979
- The depth resolution of sputter profilingApplied Physics A, 1979
- Depth-profiling of Cu-Ni sandwich samples by secondary ion mass spectrometryApplied Physics A, 1975