A new non-destructive analysis of semiconductor heterojunctions with very thin surface layers: An application of soft x-ray spectroscopy to Si-compound (film)/Si (substrate)
- 1 January 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 41-42, 57-61
- https://doi.org/10.1016/0169-4332(89)90033-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A new application of soft X-ray spectroscopy to a non-destructive analysis of a film/substrate contact system: Carbonized-layer (ultra-thin-film)/Si(100)Surface Science, 1988
- Compositional analysis of semiconductor heterojunctions: Structure of SiC (thin buffer layer)/Si(100) systemNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substratesIEEE Transactions on Electron Devices, 1981
- Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profilingApplied Physics Letters, 1978
- Zur Tiefenverteilung der durch Elektronenstoß angeregten charakteristischen Röntgenstrahlung von Bor, Kohlenstoff, Aluminium und SilberThe European Physical Journal A, 1969