Low-symmetry EPR center in hydrogen-implanted silicon
- 21 November 1983
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 99 (2-3) , 117-120
- https://doi.org/10.1016/0375-9601(83)90939-8
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Vacancies and the Chemical Trapping of Hydrogen in SiliconPhysical Review Letters, 1979
- New infra-red absorption bands in hydrogen-implanted siliconPhysics Letters A, 1979
- Infrared absorption of silicon irradiated by protonsPhysica Status Solidi (b), 1978
- EPR of a trapped vacancy in boron-doped siliconPhysical Review B, 1976
- Bonding and thermal stability of implanted hydrogen in siliconJournal of Electronic Materials, 1975
- EPR of conduction electrons produced in silicon by hydrogen ion implantationPhysica Status Solidi (a), 1974
- Electrical properties of n-type Si layers doped with proton bombardment induced shallow donorsSolid State Communications, 1972
- ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICONApplied Physics Letters, 1969
- Paramagnetic centres in proton-irradiated siliconPhysics Letters A, 1967
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964